IEC 60747-8-1 Ed. 1.0 b

IEC 60747-8-1 Ed. 1.0 b

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Semiconductor devices – Discrete devices – Part 8: Field-effect transistors – Section One: Blank detail specification for single-gate field-effect transistors up to 5 W and 1 GHz

Published by Publication Date Number of Pages
IEC 12/30/1987 33
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Description

IEC 60747-8-1 Ed. 1.0 b – Semiconductor devices – Discrete devices – Part 8: Field-effect transistors – Section One: Blank detail specification for single-gate field-effect transistors up to 5 W and 1 GHz

Product Details

Edition:
1.0
Published:
12/30/1987
Number of Pages:
33
File Size:
1 file , 1.3 MB
Note:
This product is unavailable in Ukraine, Russia, Belarus

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