Transistor, NPN, Silicon, Low-Power, Encapsulated (through-Hole and Surface Mount), and Unencapsulated, Radiation Hardness Assurance, Device Types 2N3019, 2N3057A, and 2N3700, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANK

Published by	Publication Date	Number of Pages
MIL	10/14/2016	40

Category: MIL

Description

MIL MIL-PRF-19500/391P Amendment 1 (amendment incorporated) – Transistor, NPN, Silicon, Low-Power, Encapsulated (through-Hole and Surface Mount), and Unencapsulated, Radiation Hardness Assurance, Device Types 2N3019, 2N3057A, and 2N3700, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANK

This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated device types 2N3019, 2N3057, and 2N3700. Radiation hardness assurance (RHA) level designators ÛÏMÛ, ÛÏDÛ, ÛÏPÛÏ, ÛÏLÛ, ÛÏRÛ, ÛÏFÛ, ÛÏGÛ and ÛÏHÛ are appended to the device prefix to identify devices, which have passed RHA requirements.